Datasheet4U Logo Datasheet4U.com

SPN8836 - N-Channel Enhancement Mode MOSFET

Description

The SPN8836 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Features

  • 30V/80A,RDS(ON)=6.0mΩ@VGS=10V.
  • 30V/80A,RDS(ON)=9.0mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • PPAK5x6-8L package design PIN.

📥 Download Datasheet

Datasheet preview – SPN8836

Datasheet Details

Part number SPN8836
Manufacturer SYNC POWER
File Size 374.67 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SPN8836 Datasheet
Additional preview pages of the SPN8836 datasheet.

📁 Similar Datasheet

Other Datasheets by SYNC POWER

Full PDF Text Transcription

Click to expand full text
SPN8836 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8836 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. The SPN8836 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  High Frequency Synchronous Buck Converter  DC/DC Power System  Load Switch FEATURES  30V/80A,RDS(ON)=6.0mΩ@VGS=10V  30V/80A,RDS(ON)=9.0mΩ@VGS=4.
Published: |