Datasheet4U Logo Datasheet4U.com

SPN8812 - N-Channel MOSFET

Description

The SPN8812 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Features

  • 100V/63A,RDS(ON)=9.8mΩ@VGS=10V.
  • 100V/63A,RDS(ON)=13.0mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • PPAK5x6-8L package design PIN.

📥 Download Datasheet

Datasheet preview – SPN8812

Datasheet Details

Part number SPN8812
Manufacturer SYNC POWER
File Size 276.78 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN8812 Datasheet
Additional preview pages of the SPN8812 datasheet.

📁 Similar Datasheet

Other Datasheets by SYNC POWER

Full PDF Text Transcription

Click to expand full text
SPN8812 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8812 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. The SPN8812 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  DC/DC Converter  Load Switch  SMPS Secondary Side Synchronous Rectifier  Motor Control  Power Tool FEATURES  100V/63A,RDS(ON)=9.8mΩ@VGS=10V  100V/63A,RDS(ON)=13.0mΩ@VGS=4.
Published: |