STT6N3LLH6 - MOSFET

STMicroelectronics

STT6N3LLH6 Datasheet Preview — Preview of STT6N3LLH6 PDF

Datasheet Details

Part number	STT6N3LLH6
Manufacturer	STMicroelectronics ↗
File Size	631.31 KB
Description	MOSFET
Datasheet	STT6N3LLH6-STMicroelectronics.pdf

STT6N3LLH6 Product details

Description

This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.Order code STT6N3LLH6 Table 1. Device summary Marking Package STG1 SOT23-6L Packaging Tape and reel March 2014 This is information on a product in full production.DocID023012 Rev 3 1/12 www.st.com Contents Contents STT6N3LLH6 1 Electrical ratings

Features

Order code STT6N3LLH6 VDSS RDS(on) max ID PTOT 0.025 Ω (VGS= 10 V) 30 V 6 A 1.6 W 0.036 Ω (VGS= 4.5 V).
RDS(on).
Qg industry benchmark.
Extremely low on-resistance RDS(on).
High avalanche ruggedness.
Low gate drive power losses Figure 1. Internal schematic diagram.

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Published: Nov 5, 2015 |