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STL13DP10F6 - Dual P-CHANNEL POWER MOSFET

STL13DP10F6 Description

STL13DP10F6 Dual P-channel 100 V, 0.136 Ω typ., 3.3 A STripFET™ VI DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 double island Datasheet - production da.
This device is a dual P-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure.

STL13DP10F6 Features

* 1 4 1 8 5 4 PowerFLAT™ 5x6 double island Figure 1. Internal schematic diagram Order code STL13DP10F6 VDS 100 V RDS(on) max. ID 0.18 Ω 3.3 A
* RDS(on)
* Qg industry benchmark
* Extremely low on-resistance RDS(on)
* High avalanche ruggedness
* Low gate dr

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Dual P-CHANNEL POWER MOSFET STMicroelectronics
STMicroelectronics STL13DP10F6-like datasheet