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STGYA50M120DF3 IGBT

STGYA50M120DF3 Description

STGYA50M120DF3 Datasheet Trench gate field-stop, 1200 V, 50 A, low-loss M series IGBT in a Max247 long leads package TAB 1 23 TAB 1 2 3 Max247 long.
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

STGYA50M120DF3 Features

* Maximum junction temperature: TJ = 175 °C
* 10 μs of short-circuit withstand time
* Low VCE(sat) = 1.7 V (typ. ) @ IC = 50 A
* Tight parameter distribution
* Positive VCE(sat) temperature coefficient
* Low thermal resistance
* Soft- and fast-r

STGYA50M120DF3 Applications

* Industrial drives
* UPS
* Solar inverters

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