STGYA120M65DF2 Datasheet - STMicroelectronics

STGYA120M65DF2, IGBT

STGYA120M65DF2 Datasheet Trench gate field-stop, 650 V, 120 A, low-loss M series IGBT in a Max247 long leads package TAB 1 23 TAB 1 2 3 Max247 long.
E(3) NG1E3C2T This device is an IGBT developed using an advanced proprietary trench gate field- stop structure.

STGYA120M65DF2-STMicroelectronics.pdf

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Datasheet Details

Part number:

STGYA120M65DF2

Manufacturer:

STMicroelectronics ↗

File Size:

2.03 MB

Description:

IGBT

Features

* Maximum junction temperature: TJ = 175 °C
* 6 μs of minimum short-circuit withstand time
* VCE(sat) = 1.65 V (typ. ) @ IC = 120 A
* Tight parameter distribution
* Safer paralleling
* Positive VCE(sat) temperature coefficient
* Low thermal resi

Applications

* Motor control
* UPS
* PFC

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