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STGW60H65FB Trench gate field-stop IGBT

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Description

STGW60H65FB STGWT60H65FB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Datasheet - production data TAB 3 2 1 TO-247 TO-3P 3 2 1 F.
These are IGBT devices developed using an advanced proprietary trench gate and field-stop structure.

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Features

* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* VCE(sat) = 1.6 V (typ. ) @ IC = 60 A
* Tight parameters distribution
* Safe paralleling

Applications

* Photovoltaic inverters

STGW60H65FB Distributors

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STGW60H65FB Trench gate field-stop IGBT STMicroelectronics
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