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STGW60H65DRF field stop trench gate IGBT

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Description

STGW60H65DRF 60 A, 650 V field stop trench gate IGBT with Ultrafast diode 3 2 1 TO-247 Figure 1.Internal schematic diagram Datasheet - production .
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.

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Features

* Very high speed switching
* Tight parameters distribution
* Safe paralleling
* Low thermal resistance
* 6 µs short-circuit withstand time
* Ultrafast soft recovery antiparallel diode Order code Table 1. Device summary Marking Package STGW60H65DRF GW60H65DRF TO-247

Applications

* Photovoltaic inverters
* Uninterruptible power supply
* Welding
* Power factor correction

STGW60H65DRF Distributors

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STGW60H65DRF field stop trench gate IGBT STMicroelectronics
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