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STGW60H65DF field stop trench gate IGBT

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Description

STGW60H65DF 60 A, 650 V field stop trench gate IGBT with very fast diode .
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.

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Features

* High speed switching
* Tight parameters distribution
* Safe paralleling
* Low thermal resistance
* 6 µs short-circuit withstand time
* Very fast soft recovery antiparallel diode

Applications

* Photovoltaic inverters
* Uninterruptible power supply
* Welding
* Power factor correction

STGW60H65DF Distributors

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📌 All Tags

STGW60H65DF field stop trench gate IGBT STMicroelectronics
STMicroelectronics STGW60H65DF-like datasheet
STGW60H65DFB
STGW60H65DFB-4
STGW60H65DRF
STGW60H65F
STGW60H65FB