STGW60H65DFB Trench gate field-stop IGBT

STMicroelectronics

STGW60H65DFB Description

STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Datasheet Trench gate field-stop 650 V, 60 A high speed HB series IGBT 3 2 1 TO-247 TAB 3 2 1 TO-247 long.
These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.

STGW60H65DFB Features

* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* Low saturation voltage: VCE(sat) = 1.6 V (typ. ) @ IC = 60 A
* Tight parameter distribution
* Safe paralleling
* Positive VCE(sat) temperature c

STGW60H65DFB Applications

* Photovoltaic inverters

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Datasheet Details

Part number: STGW60H65DFB
Manufacturer: STMicroelectronics ↗
File Size: 685.37 KB
Datasheet: STGW60H65DFB-STMicroelectronics.pdf
Description: Trench gate field-stop IGBT

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Trench gate field-stop IGBT STMicroelectronics

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