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STGHU30M65DF2AG - Automotive-grade trench gate field-stop IGBT

STMicroelectronics

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Datasheet Details

Part number	STGHU30M65DF2AG
Manufacturer	STMicroelectronics
File Size	1.05 MB
Description	Automotive-grade trench gate field-stop IGBT
Datasheet	STGHU30M65DF2AG-STMicroelectronics.pdf

STGHU30M65DF2AG Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

Features

TAB 7 1 HU3PAK C(TAB).
AEC-Q101 qualified.
Maximum junction temperature: TJ = 175 °C.
6 μs of minimum short-circuit withstand time.
VCE(sat) = 1.6 V (typ. ) @ IC = 30 A.
Tight parameter distribution.
Safer paralleling.
Low thermal resistance.
Soft and very fast-recovery antiparallel diode.
Excellent switching performance thanks to the extra driving kelvin pin.

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Published: Aug 17, 2024 |