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STFU24N60M2 - N-CHANNEL POWER MOSFET

Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Features

  • Order code STFU24N60M2 VDS 600 V RDS(on) max 0.19 Ω ID 18 A.
  • Extremely low gate charge.
  • Lower RDS(on) x area vs previous generation.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Zener-protected.

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Datasheet preview – STFU24N60M2

Datasheet Details

Part number STFU24N60M2
Manufacturer STMicroelectronics
File Size 548.30 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet STFU24N60M2 Datasheet
Additional preview pages of the STFU24N60M2 datasheet.

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Full PDF Text Transcription

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STFU24N60M2 N-channel 600 V, 0.168 Ω typ., 18 A MDmesh™ M2 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data 3 2 1 TO-220FP ultra narrow leads Figure 1: Internal schematic diagram D(2) G(1) Features Order code STFU24N60M2 VDS 600 V RDS(on) max 0.19 Ω ID 18 A  Extremely low gate charge  Lower RDS(on) x area vs previous generation  Low gate input resistance  100% avalanche tested  Zener-protected Applications  Switching applications  LLC converters, resonant converters Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology.
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