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STFU10N80K5 - N-channel Power MOSFET

This page provides the datasheet information for the STFU10N80K5, a member of the STF10N80K5 N-channel Power MOSFET family.

Description

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Features

  • Order code STF10N80K5 STFU10N80K5 VDS 800 V RDS(on) max. 0.600 Ω ID PTOT 9 A 30 W.
  • Industry’s lowest RDS(on) x area.
  • Industry’s best figure of merit (FoM).
  • Ultra-low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

📥 Download Datasheet

Datasheet preview – STFU10N80K5

Datasheet Details

Part number STFU10N80K5
Manufacturer STMicroelectronics
File Size 672.30 KB
Description N-channel Power MOSFET
Datasheet download datasheet STFU10N80K5 Datasheet
Additional preview pages of the STFU10N80K5 datasheet.

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Full PDF Text Transcription

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STF10N80K5, STFU10N80K5 N-channel 800 V, 0.470 Ω typ., 9 A MDmesh™ K5 Power MOSFETs in a TO-220FP and TO-220FP ultra narrow leads Datasheet - production data Figure 1: Internal schematic diagram Features Order code STF10N80K5 STFU10N80K5 VDS 800 V RDS(on) max. 0.600 Ω ID PTOT 9 A 30 W  Industry’s lowest RDS(on) x area  Industry’s best figure of merit (FoM)  Ultra-low gate charge  100% avalanche tested  Zener-protected Applications  Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
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