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STFU15NM65N - N-Channel MOSFET

Features

  • Drain Current ID= 12A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 650V(Min).
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet Details

Part number STFU15NM65N
Manufacturer INCHANGE
File Size 245.43 KB
Description N-Channel MOSFET
Datasheet download datasheet STFU15NM65N Datasheet
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Full PDF Text Transcription

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isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±25 V ID Drain Current-continuous@ TC=25℃ 12 A IDM Pulse Drain Current 48 A Ptot Total Dissipation@TC=25℃ 30 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 4.17 UNIT ℃/W STFU15NM65N isc website：www.iscsemi.
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