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STFU28N65M2 - N-CHANNEL POWER MOSFET

Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Features

  • Order code STFU28N65M2 VDS 650 V RDS(on) max 0.18 Ω ID 20 A.
  • Extremely low gate charge.
  • Excellent output capacitance (Coss) profile.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription

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STFU28N65M2 N-channel 650 V, 0.15 Ω typ., 20 A MDmesh™ M2 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data 3 2 1 TO-220FP ultra narrow leads Figure 1: Internal schematic diagram D(2) G(1) Features Order code STFU28N65M2 VDS 650 V RDS(on) max 0.18 Ω ID 20 A  Extremely low gate charge  Excellent output capacitance (Coss) profile  100% avalanche tested  Zener-protected Applications  Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
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