SCTWA70N120G2V-4 Silicon carbide Power MOSFET

STMicroelectronics

SCTWA70N120G2V-4 Description

SCTWA70N120G2V-4 Datasheet Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 91 A in an HiP247‑4 package HiP247-4 2 34 1 Drain(1, TAB) Gate(4) Driv.
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

SCTWA70N120G2V-4 Features

* Order code VDS RDS(on) max. ID SCTWA70N120G2V-4 1200 V 30 mΩ 91 A
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitance
* Very high operating junction temperature capability (TJ = 200 °C)
* Source sensing pin for increa

SCTWA70N120G2V-4 Applications

* Switching mode power supply
* DC-DC converters

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Datasheet Details

Part number: SCTWA70N120G2V-4
Manufacturer: STMicroelectronics ↗
File Size: 213.97 KB
Datasheet: SCTWA70N120G2V-4-STMicroelectronics.pdf
Description: Silicon carbide Power MOSFET

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Silicon carbide Power MOSFET STMicroelectronics

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