SCTWA40N120G2V-4 Silicon carbide Power MOSFET

STMicroelectronics

SCTWA40N120G2V-4 Description

SCTWA40N120G2V-4 Datasheet Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an HiP247-4 package HiP247-4 2 34 1 Drain(1, TAB) Gate(4) Driv.
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

SCTWA40N120G2V-4 Features

* Order code VDS RDS(on) max. ID SCTWA40N120G2V-4 1200 V 100 mΩ 36 A
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitance
* Very high operating junction temperature capability (TJ = 200 °C)
* Source sensing pin for incre

SCTWA40N120G2V-4 Applications

* Switching mode power supply
* DC-DC converters

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Datasheet Details

Part number: SCTWA40N120G2V-4
Manufacturer: STMicroelectronics ↗
File Size: 197.61 KB
Datasheet: SCTWA40N120G2V-4-STMicroelectronics.pdf
Description: Silicon carbide Power MOSFET

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Silicon carbide Power MOSFET STMicroelectronics

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