SCTWA40N120G2V Silicon carbide Power MOSFET

STMicroelectronics

SCTWA40N120G2V Description

SCTWA40N120G2V Datasheet Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an HiP247 long leads package HiP247 long leads D(2, TAB) .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

SCTWA40N120G2V Features

* Order code VDS RDS(on) max. ID SCTWA40N120G2V 1200 V 100 mΩ 36 A
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitance

SCTWA40N120G2V Applications

* Switching mode power supply
* DC-DC converters

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Datasheet Details

Part number: SCTWA40N120G2V
Manufacturer: STMicroelectronics ↗
File Size: 223.65 KB
Datasheet: SCTWA40N120G2V-STMicroelectronics.pdf
Description: Silicon carbide Power MOSFET

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Silicon carbide Power MOSFET STMicroelectronics

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