SCTWA35N65G2VAG Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

SCTWA35N65G2VAG Description

SCTWA35N65G2VAG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 long leads package .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

SCTWA35N65G2VAG Features

* Order code SCTWA35N65G2VAG VDS 650 V RDS(on) typ. 55 mΩ ID 45 A HiP247 long leads
* AEC-Q101 qualified
* Very fast and robust intrinsic body diode

SCTWA35N65G2VAG Applications

* Switching mode power supply
* EV chargers

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Datasheet Details

Part number: SCTWA35N65G2VAG
Manufacturer: STMicroelectronics ↗
File Size: 238.88 KB
Datasheet: SCTWA35N65G2VAG-STMicroelectronics.pdf
Description: Automotive-grade silicon carbide Power MOSFET

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Automotive-grade silicon carbide Power MOSFET STMicroelectronics

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