AM81719-040 RF & MICROWAVE TRANSISTORS

STMicroelectronics

Description

AM81719-040 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS *.PRELIMINARY DAT A REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED INP.
The AM81719-040 is a high power silicon NPN bipolar transistor designed for Class C, CW communications and telemetry applications in the 1.

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Datasheet Specifications

Part number: AM81719-040
Manufacturer: STMicroelectronics ↗
File Size: 44.72 KB
Datasheet: AM81719-040_STMicroelectronics.pdf
Description: RF & MICROWAVE TRANSISTORS

Applications

* . PRELIMINARY DAT A REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 40 W MIN. WITH 7 dB GAIN .400 X .400 2 LF L (M228) hermetically sealed ORDER CO DE AM81719-040 BRANDING 81719-40 PIN CONNECTION DESCRIPT

AM81719-040 Distributors

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AM81719-040 MICROWAVE TRANSISTORS STMicroelectronics

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