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AM81214-015 - RF & MICROWAVE TRANSISTORS

AM81214-015 Description

AM81214-015 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS *...REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABI.
The AM81214-015 device is a high power Class C transistor specifically designed for L-Band Radar pulsed output and driver applications.

AM81214-015 Applications

* . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 14.5 W MIN. WITH 8.6 dB GAIN .310 x .310 2LFL (S064) hermetically sealed ORDER CODE AM 81214-015 BRANDING 812

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MICROWAVE TRANSISTORS STMicroelectronics
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