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AM81719-030 - RF & MICROWAVE TRANSISTORS

AM81719-030 Description

AM81719-030 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS *..PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LO.
The AM81719-030 is a high power silicon NPN bipolar transistor designed for Class C, CW communications and telemetry applications in the 1.

AM81719-030 Applications

* . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 28 W MIN. WITH 6.7 dB GAIN .400 SQ 2LFL (M147) hermetically sealed ORDER CODE AM81719-030 BRANDING 81719-030 PI

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MICROWAVE TRANSISTORS STMicroelectronics
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