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AM81214-006 - RF & MICROWAVE TRANSISTORS

AM81214-006 Description

AM81214-006 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS *...REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABI.
The AM81214-006 device is a high power Class C transistor specifically designed for L-Band Radar pulsed driver applications.

AM81214-006 Applications

* . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 5.5 W MIN. WITH 10 dB GAIN .310 x .310 2LF L (S064) hermetically sealed ORDER CODE AM81214-6 BRANDING 81214-6

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MICROWAVE TRANSISTORS STMicroelectronics
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