GD150PIX65C6SN Datasheet - STARPOWER

GD150PIX65C6SN IGBT

GD150PIX65C6SN Features

* Low VCE(sat) Trench IGBT technology

* 6μs short circuit capability

* VCE(sat) with positive temperature coefficient

* Maximum junction temperature 175oC

* Low inductance case

* Fast & soft reverse recovery anti-parallel FWD

* Isolated copper baseplate using DBC technolo

Datasheet Details

GD150PIX65C6SN

STARPOWER

561.49 KB

Igbt.

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