RB551V-30 - SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

SEMTECH

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Datasheet Details

Part number	RB551V-30
Manufacturer	SEMTECH
File Size	163.89 KB
Description	SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Datasheet	RB551V-30-SEMTECH.pdf

RB551V-30 Product details

Description

Cathode Anode 12 SA Top View Marking Code: "SA" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage DC Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc.) Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA at IF = 500 mA Reverse Current at VR = 20 V Note: ESD sensitive product handling required.Symbol VRM VR IO IFSM Tj Ts Value 30 20 0.

Features

Small surface mounting type.
Ultra low VF.
High reliability.

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Published: May 18, 2016 |