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RB521S-40 - SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

Description

Cathode Anode 12 Z Top View Marking Code: "Z" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Repetitive Peak Reverse Voltage Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60Hz for Cyc.) Junction Temperature Storage Temperature Range Sy

Features

  • Ultra small mold type.
  • Low forward voltage.
  • High reliability.

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Datasheet Details

Part number RB521S-40
Manufacturer SEMTECH
File Size 299.36 KB
Description SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Datasheet download datasheet RB521S-40 Datasheet

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Full PDF Text Transcription

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RB521S-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE for rectifying small power applications Features • Ultra small mold type • Low forward voltage • High reliability PINNING PIN 1 2 DESCRIPTION Cathode Anode 12 Z Top View Marking Code: "Z" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Repetitive Peak Reverse Voltage Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60Hz for Cyc.) Junction Temperature Storage Temperature Range Symbol VRM VR IO IFSM Tj Ts Value 45 40 200 1 150 - 55 to + 150 Unit V V mA A OC OC Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 10 mA at IF = 100 mA at IF = 200 mA Reverse Current at VR = 10 V at VR = 40 V Symbol VF IR Min. 0.16 0.31 0.41 - Max. 0.3 0.45 0.
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