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RB521S-30 - SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

The RB521S-30 by SEMTECH is a SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE. Below is the official datasheet preview.

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Official preview page of the RB521S-30 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE datasheet (SEMTECH).

Datasheet Details

Part number RB521S-30
Manufacturer SEMTECH
File Size 183.54 KB
Description SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Datasheet download datasheet RB521S-30-SEMTECH.pdf
Additional preview pages of the RB521S-30 datasheet.

RB521S-30 Product details

Description

Cathode Anode 2 C Top View Marking Code: "C" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60Hz for Cyc.) Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 200 mA Reverse Current at VR = 10 V Symbol VR IO IFSM Tj Ts Value 30 200 1 125 - 40 to + 125 Unit V mA A OC OC Symbol VF IR Max.0.5 30 Unit V µA SEMTECH ELECTRONICS

Features

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