The RB521G-30 by SEMTECH is a SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE. Below is the official datasheet preview.
| Part number | RB521G-30 |
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| Manufacturer | SEMTECH |
| File Size | 146.70 KB |
| Description | SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE |
| Datasheet |
 RB521G-30-SEMTECH.pdf
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Cathode Anode 2 E Top View Marking Code: "E" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Average Rectified Forward Current Peak Forward Surge Current (60 Hz for 1 cyc.) Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 10 mA Reverse Current at VR = 10 V Symbol VR IO IFSM Tj Ts Value 30 100 1 125 - 40 to + 125 Unit V mA A OC OC Symbol VF IR Max.0.35 10 Unit V µA Note: P
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