RU2HE5L - N-Channel Advanced Power MOSFET

Ruichips

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Datasheet Details

Part number	RU2HE5L
Manufacturer	Ruichips
File Size	270.47 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU2HE5L-Ruichips.pdf

RU2HE5L Product details

Description

TO252 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy,

Features

200V/4.2A, RDS (ON) =1Ω(tpy. )@VGS=10V RDS (ON) =1.1Ω(tpy. )@VGS=4.5V.
Super High Dense Cell Design.
ESD protected.
Reliable and Rugged.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant).

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Published: Apr 25, 2016 |