RU2H30R - N-Channel Advanced Power MOSFET

Ruichips

RU2H30R Datasheet Preview — Preview of RU2H30R PDF

Datasheet Details

Part number	RU2H30R
Manufacturer	Ruichips
File Size	306.46 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU2H30R-Ruichips.pdf

RU2H30R Product details

Description

GD S TO220 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-

Features

200V/30A, RDS (ON) =75mΩ(Typ. ) @ VGS=10V.
Ultra Low On-Resistance.
Fast Switching and Fully Avalanche Rated.
100% avalanche tested.
175°C Operating Temperature.
Lead Free and Green Available.

📁 RU2H30R Similar Datasheet

RU2H50R - N-Channel MOSFET (INCHANGE)
RU2 - Fast-Recovery Rectifier Diodes (Sanken electric)
RU20A - FAST RECOVERY RECTIFIER DIODE (EIC)
RU2441B04 - RF Module (Samsung)
RU2441B04GCA - RF Module (Samsung)
RU2441B04UAA - RF Module (Samsung)
RU2441H04 - RF Module (Samsung)
RU2441H04CAA - RF Module (Samsung)

Other Datasheets by Ruichips

RU2H30Q - N-Channel Advanced Power MOSFET
RU2H30S - N-Channel Advanced Power MOSFET
RU2H15S - N-Channel Advanced Power MOSFET
RU2H50Q - N-Channel Advanced Power MOSFET
RU2H50S - N-Channel Advanced Power MOSFET
RU2HE2D - N-Channel Advanced Power MOSFET

Published: Apr 25, 2016 |