RU2HE2D - N-Channel Advanced Power MOSFET

Ruichips

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Datasheet Details

Part number	RU2HE2D
Manufacturer	Ruichips
File Size	235.09 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU2HE2D-Ruichips.pdf

RU2HE2D Product details

Description

SOT-223 Applications Power Management DC-DC Converter N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TA=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TA=25°C ID Continuous Drain Current TA=25°C TA=70°C PD ② RθJA Maximum Powe

Features

200V/1.2A, RDS (ON) =0.95Ω (Typ. ) @ VGS=10V RDS (ON) =1Ω (Typ. ) @ VGS=4.5V.
ESD Protected.
Reliable and Rugged.
Fast Switching.
Lead Free and Green Available Pin.

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Published: Apr 25, 2016 |