RU2H30S - N-Channel Advanced Power MOSFET

Ruichips

RU2H30S Datasheet Preview — Preview of RU2H30S PDF

Datasheet Details

Part number	RU2H30S
Manufacturer	Ruichips
File Size	309.55 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU2H30S-Ruichips.pdf

RU2H30S Product details

Description

D G S TO220 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain

Features

200V/30A, RDS (ON) =75mΩ(Typ. ) @ VGS=10V.
Ultra Low On-Resistance.
Fast Switching and Fully Avalanche Rated.
100% avalanche tested.
175°C Operating Temperature.
Lead Free and Green Available.

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Published: Apr 26, 2016 |