RU2H50S - N-Channel Advanced Power MOSFET

Ruichips

RU2H50S Datasheet Preview — Preview of RU2H50S PDF

Datasheet Details

Part number	RU2H50S
Manufacturer	Ruichips
File Size	275.13 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU2H50S-Ruichips.pdf

RU2H50S Product details

Description

TO-263 Applications Switching Application N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Sou

Features

200V/60A, RDS (ON) =36mΩ (Type) @ VGS=10V.
Low Gate Charge.
Fast Switching.
100% avalanche tested.
175°C Operating Temperature.
Lead Free,RoHS compliant Pin.

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Published: Apr 25, 2016 |