Datasheet4U.com

2SD2118 - Transistor

Rohm

📥 Download Datasheet

2SD2118 Datasheet Preview — Preview of 2SD2118 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	2SD2118
Manufacturer	ROHM
File Size	175.22 KB
Description	Transistor
Datasheet	2SD2118_Rohm.pdf

2SD2118 Product details

Features

1) Low VCE(sat). VCE(sat) = 0.25V (Typ. ) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1412. zDimensions (Unit : mm) 2SD2118 zStructure Epitaxial planar type NPN silicon transistor ROHM : CPT3 EIAJ : SC-63 zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Collector-base voltage VCBO 50 Collector-emitter voltage VCEO 20 Emitter-base voltage VEBO 6 Collector current IC 5 ICP 10 Collector power dissipation 2SD2118 Junction te.

📁 2SD2118 Similar Datasheet

2SD211 - SILICON POWER TRANSISTOR (SavantIC)
2SD2110 - Power Transistor (Inchange Semiconductor)
2SD2111 - Silicon NPN Transistor (Hitachi Semiconductor)
2SD2112 - Power Transistor (Inchange Semiconductor)
2SD2113 - Power Transistor (Inchange Semiconductor)
2SD2114 - NPN Transistor (JCST)
2SD2115 - Silicon NPN Epitaxial Planar Transistor (Hitachi Semiconductor)
2SD2115L - Silicon NPN Transistor (Hitachi Semiconductor)

Other Datasheets by Rohm

2SD2114K - High-current Gain Medium Power Transistor
2SD2132 - NPN SIlicon Transistor
2SD2142K - High-gain Amplifier Transistor
2SD2143 - Medium Power Transistor
2SD2144 - High-current Gain Medium Power Transistor
2SD2144S - High-current Gain Medium Power Transistor

Published: Apr 3, 2005 |