Datasheet4U Logo Datasheet4U.com

2SD2113 - Power Transistor

📥 Download Datasheet

Preview of 2SD2113 PDF
datasheet Preview Page 2

2SD2113 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 1.5A High DC Current Gain : hFE= 1000(Min) @ IC= 1.5A, VCE= 3V Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltag

📁 2SD2113 Similar Datasheet

  • 2SD211 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD2111 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD2114 - NPN Transistor (JCST)
  • 2SD2114K - High-current Gain Medium Power Transistor (Rohm)
  • 2SD2115 - Silicon NPN Epitaxial Planar Transistor (Hitachi Semiconductor)
  • 2SD2115L - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD2115S - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD2116 - NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
Other Datasheets by Inchange Semiconductor
Published: |