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2SD2115(L)/(S)
Silicon NPN Epitaxial Planar
Application
Low frequency power amplifier
Outline
DPAK
4 4
1
2
3 12
S Type
3
1. Base 2. Collector 3. Emitter 4. Collector
L Type
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg
1
Rating 150 60 5 2 2.5 18 150 –55 to +150
Unit V V V A A W °C °C
2SD2115(L)/(S)
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min 150 60 5 — 150 — — — Typ — — — — — — — — Max — — — 10 — 0.8 1.3 0.
2SD2115 Datasheet
