2SD2144 - High-current Gain Medium Power Transistor

Datasheet Details

Part number	2SD2144
Manufacturer	ROHM
File Size	124.29 KB
Description	High-current Gain Medium Power Transistor
Datasheet	2SD2144_Rohm.pdf

1) High DC current gain. hFE = 1200 (Typ. ) 2) High emitter-base voltage. VEBO = 12V (Min. ) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ. ) (IC / IB = 500mA / 20mA) FStructure Epitaxial planar type NPN silicon transistor FExternal dimensions (Units: mm) (96-232-C107) 232 Transistors FAbsolute maximum ratings (Ta = 25_C) 2SD2114K / 2SD2144S FElectrical characteristics (Ta = 25_C) FPackaging specifications and hFE FElectrical characteristic curves hFE values are classified as follows : 233 Trans.

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Published: Apr 3, 2005 |