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TP70H240G4ZS - 700V GaN FET

Renesas

The TP70H240G4ZS by Renesas is a 700V GaN FET. Below is the official datasheet preview.

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TP70H240G4ZS 700V GaN FET by Renesas - Datasheet Preview — Official preview page of the TP70H240G4ZS 700V GaN FET datasheet (Renesas).

Datasheet Details

Part number	TP70H240G4ZS
Manufacturer	Renesas
File Size	881.35 KB
Description	700V GaN FET
Datasheet	TP70H240G4ZS-Renesas.pdf
Additional preview pages of the TP70H240G4ZS datasheet.

TP70H240G4ZS Product details

Description

The TP70H240G4ZS 700V, 240mΩ Gallium Nitride (GaN) FET is a normally-off device that uses Renesas’ Gen IV platform.

Features

Gen IV technology.
JEDEC-qualified GaN technology.
Dynamic RDS(on)eff production tested.
Robust design, defined by.
Transient over-voltage capability.
Operation with E-mode gate drivers without need for Zener protection.
Zero reverse recovery charge.
Reduced crossover loss.
RoHS compliant and Halogen-free packaging.
2kV HBM ESD rating.

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Published: Oct 27, 2025 |