Datasheet Details
- Part number
- TP70H150G4LSGB
- Manufacturer
- Renesas ↗
- File Size
- 875.57 KB
- Datasheet
- TP70H150G4LSGB-Renesas.pdf
- Description
- 650V GaN FET
TP70H150G4LSGB Description
TP70H150G4LSGB 650V SuperGaN® GaN FET in PQFN (source tab) Datasheet .
The TP70H150G4LSGB 700V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’ Gen IV platform.
TP70H150G4LSGB Features
* Gen IV technology
* JEDEC-qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Transient over-voltage capability
* Operation with E-mode Gate drivers without
need for Zener protection
* Very low QRR
* Reduced crossover loss
TP70H150G4LSGB Applications
* Consumer
* Power adapters
* Low power SMPS
* Lighting
Specifications
VDS (V)
700
VDSS(TR)(V) maximum
800
RDS(on) (mΩ) maximum [1]
180
QOSS (nC) typical
27
QG (nC) typical
5.5
1. Dynamic R ; DS(on) see Figure 21 and Figure 22.
TP70H150G4LSGB PQFN
D
G KS
S Cascode Schem
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