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TP70H150G4LSGB 650V GaN FET

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Description

TP70H150G4LSGB 650V SuperGaN® GaN FET in PQFN (source tab) Datasheet .
The TP70H150G4LSGB 700V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’ Gen IV platform.

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Features

* Gen IV technology
* JEDEC-qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Transient over-voltage capability
* Operation with E-mode Gate drivers without need for Zener protection
* Very low QRR
* Reduced crossover loss

Applications

* Consumer
* Power adapters
* Low power SMPS
* Lighting Specifications VDS (V) 700 VDSS(TR)(V) maximum 800 RDS(on) (mΩ) maximum [1] 180 QOSS (nC) typical 27 QG (nC) typical 5.5 1. Dynamic R ; DS(on) see Figure 21 and Figure 22. TP70H150G4LSGB PQFN D G KS S Cascode Schem

TP70H150G4LSGB Distributors

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TP70H150G4LSGB 650V GaN FET Renesas
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