Datasheet Details
- Part number
- TP70H300G4JSGB
- Manufacturer
- Renesas ↗
- File Size
- 833.57 KB
- Datasheet
- TP70H300G4JSGB-Renesas.pdf
- Description
- 700V GaN FET
TP70H300G4JSGB Description
TP70H300G4JSGB 700V SuperGaN® GaN FET in PQFN (source tab) Datasheet .
The TP70H300G4JSGB 700V, 240mΩ Gallium Nitride (GaN) FET is a normally-off device that uses Renesas’ Gen IV platform.
TP70H300G4JSGB Features
* Gen IV technology
* JEDEC-qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Transient over-voltage capability
* Operation with E-mode gate drivers without
need for Zener protection.
* Very low QRR
* Reduced crossover loss
TP70H300G4JSGB Applications
* Consumer
* Power adapters
* Low power SMPS
* Lighting
Key Specifications
VDS (V)
700
VDSS(TR)(V)
800
RDS(on) (mΩ) maximum [1]
312
QOSS (nC) typical
17
QG (nC) typical
5.4
1. Dynamic RDS(on); see Figure 21 and Figure 22.
Cascode Schematic Symbol
Cascode Device Structur
📁 Related Datasheet
📌 All Tags