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TP70H150G4LSG 700V GaN FET

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Description

TP70H150G4LSG 700V SuperGaN® GaN FET in PQFN (source tab) Datasheet .
The TP70H150G4LSG 700V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’ Gen IV platform.

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Features

* Gen IV technology
* JEDEC-qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Wide gate safety margin
* Transient over-voltage capability
* Very low QRR
* Reduced crossover loss
* RoHS compliant and Halogen-free packagin

Applications

* Consumer
* Power adapters
* Low power SMPS
* Lighting Key Specifications VDS (V) 700 VDSS(TR)(V) maximum 800 RDS(on) (mΩ) maximum [1] 180 QOSS (nC) typical 27.3 QG (nC) typical 11.3 1. Dynamic R ; DS(on) see Figure 21 and Figure 22. Cascode Schematic Symbol Cascode Devi

TP70H150G4LSG Distributors

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