Datasheet Specifications
- Part number
- RJP30K3DPP-M0
- Manufacturer
- Renesas ↗
- File Size
- 154.76 KB
- Datasheet
- RJP30K3DPP-M0_Renesas.pdf
- Description
- N-Channel Power MOSFET
Description
Preliminary Datasheet RJP30K3DPP-M0 Silicon N Channel IGBT High Speed Power Switching .
Features
* Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.1V typ High speed switching tr = 90 ns typ, tf = 250 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL R07DS0501EJ0100 Rev.1.00 Jul 05, 2011 OApplications
* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign lawRJP30K3DPP-M0 Distributors
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