RJP1CS08DWA, RJP1CS08DWT - IGBT

Name: RJP1CS08DWA
SKU: RJP1CS08DWA-721595

Renesas

📥 Download Datasheet

RJP1CS08DWA Datasheet Preview — This datasheet PDF includes multiple part numbers: RJP1CS08DWA, RJP1CS08DWT. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	RJP1CS08DWA, RJP1CS08DWT
Manufacturer	Renesas
File Size	129.52 KB
Description	IGBT
Datasheet	RJP1CS08DWT_Renesas.pdf
Note	This datasheet PDF includes multiple part numbers: RJP1CS08DWA, RJP1CS08DWT. Please refer to the document for exact specifications by model.

RJP1CS08DWA Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 200 A, VGE = 15 V, Ta = 25C).
High speed switching.
Short circuit withstands time (10 s min. ) R07DS0831EJ0001 Rev.0.01 Jul 05, 2012 Outline Die: RJP1CS08DWT-80 2 C Wafer: RJP1CS08DWA-80 3 2 3 1G 1 3 E 3 1. Gate 2. Collector (The back) 3. Emitter 3 www. DataSheet. net/ Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 10.

📁 RJP1CS08DWA Similar Datasheet

RJP020N06 - Drive Nch MOS FET (Rohm)
RJP020N06FRA - Power MOSFET (ROHM)
RJP020N06T100 - N-Channel MOSFET (VBsemi)
RJP2557DPK - IGBT (Renesas Technology)
RJP3053DPP - IGBT (Renesas Technology)
RJP3054DPP - IGBT (Renesas Technology)
RJP3055DPP - IGBT (Renesas Technology)
RJP3056DPK - IGBT (Renesas Technology)

Other Datasheets by Renesas

Published: Jul 21, 2012 |