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RJP1CS08DWT IGBT

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Description

Preliminary Datasheet RJP1CS08DWT/RJP1CS08DWA 1250V - 200A - IGBT Application: Inverter .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Features

* Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 200 A, VGE = 15 V, Ta = 25C)
* High speed switching
* Short circuit withstands time (10 s min. ) R07DS0831EJ0001 Rev.0.01 Jul 05, 2012 Outline Die: RJP1CS08DWT-80 2 C Wafer: RJP1CS08DWA-80 3 2 3 1G 1 3 E

Applications

* for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; an

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