RJP1CS08DWT - IGBT

Name: RJP1CS08DWT
SKU: RJP1CS08DWT-721594

Renesas

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Datasheet Details

Part number	RJP1CS08DWT
Manufacturer	Renesas
File Size	129.52 KB
Description	IGBT
Datasheet	RJP1CS08DWT_Renesas.pdf

RJP1CS08DWT Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 200 A, VGE = 15 V, Ta = 25C).
High speed switching.
Short circuit withstands time (10 s min. ) R07DS0831EJ0001 Rev.0.01 Jul 05, 2012 Outline Die: RJP1CS08DWT-80 2 C Wafer: RJP1CS08DWA-80 3 2 3 1G 1 3 E 3 1. Gate 2. Collector (The back) 3. Emitter 3 www. DataSheet. net/ Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 10.

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Published: Jul 21, 2012 |