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RJP020N06T100 N-Channel 60-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.076 at VGS = 10 V 60
0.088 at VGS = 4.5 V
ID (A)a 5.5 4.5
Qg (Typ.) 29 nC
FEATURES • Halogen-free • TrenchFET® Power MOSFET
APPLICATIONS • Load Switches for Portable Devices
RoHS
COMPLIANT
D
D
GD S
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
60
V
VGS
± 20
TC = 25 °C
5.5a
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
4a 4.7a, b, c
TA = 70 °C
4 a, b, c
A
Pulsed Drain Current
IDM
20
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
IS
5.2 5.1b, c
TC = 25 °C
5.3
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
PD
4 2.
RJP020N06T100 Datasheet
