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RJP1CS03DWA - IGBT

Download the RJP1CS03DWA datasheet PDF. This datasheet also covers the RJP1CS03DWT variant, as both devices belong to the same igbt family and are provided as variant models within a single manufacturer datasheet.

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.

Features

  • Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C).
  • High speed switching.
  • Short circuit withstands time (10 s min. ) R07DS0826EJ0001 Rev.0.01 Jul 03, 2012 Outline Die: RJP1CS03DWT-80 2 C 3 1G 1 Wafer: RJP1CS03DWA-80 2 1. Gate 2. Collector (The back) 3. Emitter www. DataSheet. net/ E 3 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Junc.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (RJP1CS03DWT_Renesas.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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Preliminary Datasheet RJP1CS03DWT/RJP1CS03DWA 1250V - 30A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C)  High speed switching  Short circuit withstands time (10 s min.) R07DS0826EJ0001 Rev.0.01 Jul 03, 2012 Outline Die: RJP1CS03DWT-80 2 C 3 1G 1 Wafer: RJP1CS03DWA-80 2 1. Gate 2. Collector (The back) 3. Emitter www.DataSheet.net/ E 3 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Junction temperature Symbol VCES VGES IC Note1 IC Note1 Tj Ratings 1250 ±30 60 30 150 Unit V V A A C Notes: 1. This data is a regulated value in evaluation package. R07DS0826EJ0001 Rev.0.
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