RJP1CS04DWT Datasheet - Renesas

RJP1CS04DWT, IGBT

Preliminary Datasheet RJP1CS04DWT/RJP1CS04DWA 1250V - 50A - IGBT Application: Inverter .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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RJP1CS04DWT_Renesas.pdf

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Datasheet Details

Part number:

RJP1CS04DWT

Manufacturer:

Renesas ↗

File Size:

128.94 KB

Description:

IGBT

Features

* Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C)
* High speed switching
* Short circuit withstands time (10 s min. ) R07DS0827EJ0004 Rev.0.04 Jun 05, 2012 Outline Die: RJP1CS04DWT-80 2 C 3 1G 1 Wafer: RJP1CS04DWA-80 2 1. Gate

Applications

* for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; an

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