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RJK60S7DPQ-E0 - High Speed Power Switching SJ MOS FET

RJK60S7DPQ-E0 Description

Preliminary Datasheet RJK60S7DPQ-E0 600V - 30A - SJ MOS FET High Speed Power Switching R07DS0736EJ0300 Rev.3.00 Dec 10, 2012 .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

RJK60S7DPQ-E0 Features

* Superjunction MOSFET
* Low on-resistance RDS(on) = 0.1  typ. (at ID = 15 A, VGS = 10 V, Ta = 25C)
* High speed switching tf = 9 ns typ. (at ID = 15 A, VGS = 10 V, RL = 20 , Rg = 10 , Ta = 25C) Outline RENESAS Package code: PRSS0003ZE-A (Package name: TO-247) D 4 123 G S 1. G

RJK60S7DPQ-E0 Applications

* for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; an

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High Speed Power Switching MOS FET Renesas
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