RJK60S4DPE High Speed Power Switching SJ MOS FET

Renesas

Description

Preliminary Datasheet RJK60S4DPE 600V - 16A - SJ MOS FET High Speed Power Switching R07DS0733EJ0200 Rev.2.00 Oct 12, 2012 .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Datasheet Specifications

Part number: RJK60S4DPE
Manufacturer: Renesas ↗
File Size: 187.67 KB
Datasheet: RJK60S4DPE-Renesas.pdf
Description: High Speed Power Switching SJ MOS FET

Features

* Superjunction MOSFET
* Low on-resistance RDS(on) = 0.23  typ. (at ID = 8 A, VGS = 10 V, Ta = 25C)
* High speed switching tf = 21 ns typ. (at ID = 8 A, VGS = 10 V, RL = 37.5 , Rg = 10 , Ta = 25C) Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 4 123 G D

Applications

* for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; an

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RJK60S4DPE High Speed Power Switching MOS FET Renesas

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