RJK60S5DPQ-E0 High Speed Power Switching MOSFET

Renesas

Description

RJK60S5DPQ-E0 600V - 20A - SJ MOS FET High Speed Power Switching Preliminary Datasheet R07DS0734EJ0200 Rev.2.00 Jan 23, 2013 .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Datasheet Specifications

Part number: RJK60S5DPQ-E0
Manufacturer: Renesas ↗
File Size: 206.49 KB
Datasheet: RJK60S5DPQ-E0-Renesas.pdf
Description: High Speed Power Switching MOSFET

Features

* Superjunction MOSFET
* Low on-resistance RDS(on) = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)
* High speed switching tf = 23 ns typ. (at ID = 10 A, VGS = 10 V, RL = 30 , Rg = 10 , Ta = 25C) Outline RENESAS Package code: PRSS0003ZE-A (Package name: TO-247) D 4 123 G S 1.

Applications

* for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; an

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RJK60S5DPQ-E0 High Speed Power Switching MOSFET Renesas

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